View CGY2106TS_44532.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INTEGRATED CIRCUITS
DATA SHEET
CGY2106TS High dynamic range dual LNA MMIC
Preliminary specification File under Integrated Circuits, IC17 2000 Aug 28
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
FEATURES * Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) * Typical noise figure 0.5 dB * Typical gain of 16.1 dB at 860 MHz * Input IP3 of 14 dBm at 860 MHz * Low current (78 mA per channel at 2.0 V) * Low cost SSOP16 plastic package. APPLICATIONS * GSM base station. ORDERING INFORMATION TYPE NUMBER CGY2106TS BLOCK DIAGRAM PACKAGE NAME SSOP16 DESCRIPTION GENERAL DESCRIPTION
CGY2106TS
The CGY2106TS is a dual Gallium Arsenide (GaAs) MMIC amplifier designed for very low noise figure applications, where high linearity is also required. Excellent tracking between the two amplifiers is obtained. Gain and noise figure variations are well controlled with temperature. The device is suitable for use in GSM base stations and other applications where high gain linearity and very low noise are required. The application board might need to be rematched for optimum performance.
VERSION SOT369-1
plastic shrink small outline package; 16 leads; body width 4.4 mm
handbook, full pagewidth
OUT2 16
VG2 13
VG1 12
OUT1
9
CGY2106TS
1, 2, 14, 15
3
4, 5
6
7, 8, 10, 11
FCA108
VS2
IN2 n.c.
IN1
VS1
Fig.1 Block diagram.
2000 Aug 28
2
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
PINNING SYMBOL VS2 IN2 n.c. IN1 VS1 OUT1 VG1 VG2 OUT2 PIN 1, 2, 14 and 15 3 4, 5 6 7, 8, 10 and 11 9 12 13 16 DESCRIPTION amplifier 2 source amplifier 2 input not connected amplifier 1 input amplifier 1 source amplifier 1 drain and output amplifier 1 gate bias amplifier 2 gate bias amplifier 2 drain and output
n.c. 4
handbook, halfpage
CGY2106TS
VS2 1 VS2 2 IN2 3
16 OUT2 15 VS2 14 VS2
CGY2106TS
n.c. 5 IN1 6 VS1 7 VS1 8
FCA109
13 VG2 12 VG1 11 VS1 10 VS1 9 OUT1
Fig.2 Pin configuration.
LIMITING VALUES SYMBOL VDS VGS VGD Vsupply Vneg Tamb Tch Tstg Ptot PARAMETER voltage difference between OUT1 drain (OUT2 resp.) and VS1 source (VS2 resp.) pins voltage difference between VG1 gate (VG2 resp.) and VS1 source (VS2 resp.) pins voltage difference between gate VG1 (VG2 resp.) and OUT1 drain (OUT2 resp.) pins positive supply voltage negative supply voltage ambient temperature operating channel temperature storage temperature total power dissipation Tamb < 85 C CONDITIONS MIN. - -3 - see Chapter "Test and - application information" see Chapter "Test and -6 application information" -40 - - - MAX. UNIT 5 +1 7 6 - +85 150 150 430 V V V V V C C C mW
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE 150 UNIT K/W
2000 Aug 28
3
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
DC CHARACTERISTICS FROM JUNCTION TO AMBIENT Tamb = 25 C; unless otherwise specified. Parameters are guaranteed when using external components and application board shown in Chapter "Test and application information". SYMBOL Isupply Ineg PARAMETER positive supply voltage currents (for each LNA) negative supply voltage currents (for each LNA) CONDITIONS Vsupply = 5.0 V; Vneg = -5.0 V Vsupply = 5.0 V; Vneg = -5.0 V MIN. 64 - TYP. MAX. UNIT 78 0.8 86 1.1 mA mA
AC CHARACTERISTICS Vsupply = 5.0 V; Vneg = -5.0 V; both LNAs biased and Zo = 50 ; duty cycle 100%; Tamb = 25 C. Parameters are guaranteed when using external components and application board shown in chapter "Test and application information"; unless otherwise specified. SYMBOL f G G800 ISOr ISOi-i NF IP3i S11 S22 S21(T) NF(T) IP3i(T) frequency small signal gain small signal gain at f = 800 MHz reverse isolation isolation between inputs noise figure input third order intercept point input reflection coefficient output reflection coefficient small signal gain variation with temperature noise figure variation with temperature input third order intercept point variation with temperature f = 0.5 MHz 50 source 50 load -40 C Tamb < +85 C -40 C < Tamb +85 C -40 C < Tamb < +85 C PARAMETER CONDITIONS MIN. 800 14.6 15.8 18 25 - 11.5 - - - - - TYP. MAX. UNIT - 16.1 16.7 20 28 0.5 14 -8.5 -20 0.5 920 17.6 17.6 - - 0.7 - - - - MHz dB dB dB dB dB dBm dB dB dB dB dB
0.20 - 0.40 -
2000 Aug 28
4
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
TEST AND APPLICATION INFORMATION
CGY2106TS
handbook, full pagewidth
Vsupply
Vsupply Vneg R4 R3
R2 C2
R6
R5
R1 C1
C4 L2 C6 OUT2 C8
TRL6
TRL5 L1
C3 C5 OUT1
16
15
14
13
12
11
10
9
C7
CGY2106TS
1 2 3 4, 5 n.c. TRL4 TRL2 IN2 TRL3 TRL1 IN1
FCA110
6
7
8
The demonstration board has been optimized for a centre frequency of 0.9 GHz. The MMIC s-parameters (typical values) are available in a range from 0.1 to 6 GHz on request.
Fig.3 Application board schematic.
2000 Aug 28
5
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
handbook, full pagewidth
Vneg
OUT2
Vsupply2
Vsupply1
OUT1
R2 C2 C4 L2 C6 C8 TRL6 TRL4 TRL2
R4 R6
R3 R5
R1 C1 C3 L1 C7 TRL5 TRL3 TRL1 C5
IN2
IN1
FCA199
Designed for a frequency of 0.9 GHz.
Fig.4 Application board layout.
2000 Aug 28
6
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Table 1 Components for layout; see Figs 3 and 4. VALUE 1 nF 100 pF 2.2 pF 100 pF 39 5.6 k 3.3 k 39 nH REFERENCE Philips; NPO; 0603 Philips; NPO; 0603 Philips; NPO; 0603 Philips; NPO; 0603 Bourns; 0805 Philips; 0603 Philips; 0603 Coilcraft; 0603 decoupling decoupling decoupling decoupling drain biasing resistor gate biasing resistor gate biasing resistor drain biasing inductor
CGY2106TS
COMPONENT C1; C2 C3; C4 C5; C6 C7; C8 R1; R2 R3; R4 R5; R6 L1; L2 Table 2
FUNCTION
Transmission lines for layout; see Figs 3 and 4. ZO 100 70 70 LENGTH 0.040 at 900 MHz 0.033 at 900 MHz 0.035 at 900 MHz LENGTH(1) 10 mm 5 mm 4.4 mm WIDTH(1) 0.25 mm 0.80 mm 0.80 mm
COMPONENT TRL1; TRL2 TRL3; TRL4 TRL5; TRL6 Note
1. Transmission line lengths and widths in mm are valid for a double sided PCB; thickness 0.8 mm in FR4 material ( = 4.7).
2000 Aug 28
7
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
Measured performance of the demonstration board (designed for a centre frequency of 0.9 GHz).
handbook, halfpage
20 G (dB) 16
FCA112
handbook, halfpage
2
FCA113
NF (dB) 1.6
12
1.2
8
0.8
4
0.4
0 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
0 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.5 Gain as a function of frequency.
Fig.6 Noise figure as a function of frequency.
handbook, halfpage
0
FCA114
handbook, halfpage
20
FCA115
S11 (dB) -5
S21 (dB) 16
12
8 -10 4
-15 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
0 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.7 S11 as a function of frequency.
Fig.8 S21 as a function of frequency.
2000 Aug 28
8
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
handbook, halfpage
0
FCA116
S12 (dB) -5
handbook, halfpage
0
FCA117
S22 (dB) -5
-10
-10
-15
-15
-20
-20
-25 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
-25 0.5
0.7
0.9
1.1
1.3
1.5 f (GHz)
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.9 S12 as a function of frequency.
Fig.10 S22 as a function of frequency.
handbook, halfpage
0
FCA118
handbook, halfpage
20
FCA119
ISOi-i (dB) -10
Po (dBm) 10
-20
0 -30
-40 0.5
0.7
0.9
1.1
1.5 1.3 f (GHz)
-10 -20
-10
0
Pi (dBm)
10
Vsupply = 5 V; Vneg = -5 V.
Vsupply = 5 V; Vneg = -5 V.
Fig.11 Isolation between RF inputs as a function of frequency.
Fig.12 RF output power as a function of RF input power.
2000 Aug 28
9
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
PACKAGE OUTLINE SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
CGY2106TS
SOT369-1
D
E
A X
c y HE vM A
Z
16
9
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
8
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0.00 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.25 0.13 D (1) 5.30 5.10 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT369-1 REFERENCES IEC JEDEC MO-152 EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 99-12-27
2000 Aug 28
10
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. Manual soldering
CGY2106TS
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2000 Aug 28
11
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Suitability of surface mount IC packages for wave and reflow soldering methods
CGY2106TS
SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
2000 Aug 28
12
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
CGY2106TS
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Aug 28
13
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
NOTES
CGY2106TS
2000 Aug 28
14
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
NOTES
CGY2106TS
2000 Aug 28
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/01/pp16
Date of release: 2000
Aug 28
Document order number:
9397 750 07171

▲Up To Search▲

Price & Availability of CGY2106TS

	To Download CGY2106TS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .